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   DSA30I150PA V = VR 150 Symbol Definition Ratings typ. max. IR V IFAV A VF 0.93 RthJC 0.85 K/W min. 30 VRSM V 450 T = 25°CVJ T = °CVJ 125 mA 5 V = VR 150 T = 25°CVJ I = AF 30 V T = °CC 150 Ptot 175 W T = 25°CC RthCH K/W max. non-repetitive reverse blocking voltage reverse current, drain current forward voltage drop total power dissipation Conditions Unit 1.09 T = 25°CVJ VF0 V 0.55 T = °CVJ 175 rF 6 m? V 0.80 T = °CVJ 125 I = AF 30 V 0.98 I = AF 60 I = AF 60 threshold voltage slope resistance for power loss calculation only μA VRRM V 150 max. repetitive reverse blocking voltage T = 25°CVJ CJ 289 junction capacitance V = VR 12 T = 25°Cf = 1 MHz VJ pF IFSM t = 10 ms; (50 Hz), sine; T = 45°CV = 0 VR VJ max. forward surge current T = °CVJ 175 390 A rectangular 0.5d = average forward current thermal resistance junction to case thermal resistance case to heatsink Schottky 150 0.50 IXYS reserves the right to change limits, conditions and dimensions. 20131031c Data according to IEC 60747and per semiconductor unless otherwise specified ? 2013 IXYS all rights reserved |